Baghdad Science Journal | Current Issue

Volume 15 - Issue 4

(18 Articles)

(P) ISSN:2078-8665

(E) ISSN:2411-7986

 English  /  عربي

2018 > Issue 3 > Volume 15

Synthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor

Ashwaq T. Dahham|Kadhim A. Aadim |Nada K. Abbas


The physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore diameter varies from 48.63 to 72.54 nm with increasing etching time from 5 to 15min and from 72.54 to 51.37nm with increasing current from 10 to 30 mA. From the study, it was found that the gas sensitivity of In2O3: CdO semiconductor, against NO2 gas, directly correlated to the nanoparticles size, and its sensitivity increases with increasing operating temperature. .


AFM, Gas Sensor, Metal Oxide Semiconductor, Porous Silicon.

Published Date:13/09/2018 | Total Downloads:(33) | Doi:( http://10.21123/bsj.2018.15.3.0292 )